On the Implantation of Protons into Silicon Plates in the Case of a Mechanically Stressed Surface Layer
- Autores: Dyachkova I.G.1, Novoselova E.G.1,2, Smirnov I.S.1,2
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Afiliações:
- Shubnikov Institute of Crystallography
- Research Institute of Advanced Materials and Technologies
- Edição: Volume 12, Nº 3 (2018)
- Páginas: 613-618
- Seção: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/195604
- DOI: https://doi.org/10.1134/S1027451018030278
- ID: 195604
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Resumo
The effect of mechanical stresses of different signs on the formation of radiation defects in crystalline silicon is studied alongside the effect of strain on the accumulation of radiation defects in KEF-4.5 silicon after the implantation of protons with an energy of 140 and 500 keV and a dose of 2.5 × 1015 cm–2. The stress-strain state of a thin circular plate with a strained surface layer is calculated. It is shown that the applied mechanical stresses generally have an effect on the thickness of the damaged layer, whose thickness decreases with an increase in compressive stresses near the surface in comparison with its thickness in the undamaged sample and grows in the opposite case.
Sobre autores
I. Dyachkova
Shubnikov Institute of Crystallography
Autor responsável pela correspondência
Email: sig74@mail.ru
Rússia, Moscow, 119333
E. Novoselova
Shubnikov Institute of Crystallography; Research Institute of Advanced Materials and Technologies
Email: sig74@mail.ru
Rússia, Moscow, 119333; Moscow, 115054
I. Smirnov
Shubnikov Institute of Crystallography; Research Institute of Advanced Materials and Technologies
Email: sig74@mail.ru
Rússia, Moscow, 119333; Moscow, 115054
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