Emission and optical properties of SiO2/Si thin films

详细

The energy-band parameters and the emission and optical properties of SiO₂/Si films of different thicknesses prepared by thermal oxidation and ion bombardment are studied. It is shown that the band gap E_g of the SiO₂/Si film with a thickness of 30–40 Å is 8.8–8.9 eV. In the transition layer, the E_g value and secondary-electron emission coefficient σ_m steadily decrease with increasing depth.