Research of Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems
- 作者: Polyakova V.1, Saenko A.1, Kots I.1, Kovalev A.1
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隶属关系:
- Southern Federal University
- 期: 卷 53, 编号 1 (2024)
- 页面: 58-63
- 栏目: ПРИБОРЫ
- URL: https://journals.rcsi.science/0544-1269/article/view/259587
- DOI: https://doi.org/10.31857/S0544126924010069
- ID: 259587
如何引用文章
详细
This article presents the results of experimental studies of structures formed on the basis of the crossbar architecture of memristor structures made of various materials. TiO2 was used as a working memristor layer. The following materials were used for the contact pads: Al, Ni, Cr, Mo, Ta, Ag. In the course of experimental studies, the optimal combination of materials for the formation of crossbar memristor structures was revealed, which in the future can be used in devices of neuromorphic artificial intelligence systems.
作者简介
V. Polyakova
Southern Federal University
编辑信件的主要联系方式.
Email: vpolyakova@sfedu.ru
俄罗斯联邦, Taganrog
A. Saenko
Southern Federal University
Email: vpolyakova@sfedu.ru
俄罗斯联邦, Taganrog
I. Kots
Southern Federal University
Email: vpolyakova@sfedu.ru
俄罗斯联邦, Taganrog
A. Kovalev
Southern Federal University
Email: vpolyakova@sfedu.ru
俄罗斯联邦, Taganrog
参考
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