Effect of crystallographic orientation on the phase transition of a finite TiNi shape memory alloy wafer.

A. I. Pavlov; Павлов А. И.; A. I. Kartsev; Карцев А. И.; V. V. Koledov; Коледов В. В.; P. V. Lega; Лега П. В.

doi:10.31857/S0033849423100133

Effect of crystallographic orientation on the phase transition of a finite TiNi shape memory alloy wafer.

作者: Pavlov A.¹, Kartsev A.²^,3, Koledov V.⁴, Lega P.²^,4
隶属关系:
1. Bauman Moscow State Technical University
2. RUDN University
3. Computational Center of Far East branch Russian Academy of Sciences
4. Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
期: 卷 68, 编号 10 (2023)
页面: 1035-1039
栏目: ФИЗИЧЕСКИЕ ПРОЦЕССЫ В ЭЛЕКТРОННЫХ ПРИБОРАХ
URL: https://journals.rcsi.science/0033-8494/article/view/232592
DOI: https://doi.org/10.31857/S0033849423100133
EDN: https://elibrary.ru/DOCWBT
ID: 232592

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详细

A simulation of a TiNi shape memory alloy plate was carried out at various crystallographic orientations using a free package for classical molecular dynamics LAMMPS. It was found that the crystallographic orientation of the plate has a significant effect on the phase transition temperature. The dependence of surface energy on temperature for crystallographic orientations (100), (110), (112), (122) was constructed. The stability of the model used was investigated, as a result of which its applicability in these calculations was confirmed.

关键词

shape memory, classical molecular dynamics, phase transition temperature

参考

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