Effect of crystallographic orientation on the phase transition of a finite TiNi shape memory alloy wafer.
- Authors: Pavlov A.I.1, Kartsev A.I.2,3, Koledov V.V.4, Lega P.V.2,4
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Affiliations:
- Bauman Moscow State Technical University
- RUDN University
- Computational Center of Far East branch Russian Academy of Sciences
- Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
- Issue: Vol 68, No 10 (2023)
- Pages: 1035-1039
- Section: ФИЗИЧЕСКИЕ ПРОЦЕССЫ В ЭЛЕКТРОННЫХ ПРИБОРАХ
- URL: https://journals.rcsi.science/0033-8494/article/view/232592
- DOI: https://doi.org/10.31857/S0033849423100133
- EDN: https://elibrary.ru/DOCWBT
- ID: 232592
Cite item
Abstract
A simulation of a TiNi shape memory alloy plate was carried out at various crystallographic orientations using a free package for classical molecular dynamics LAMMPS. It was found that the crystallographic orientation of the plate has a significant effect on the phase transition temperature. The dependence of surface energy on temperature for crystallographic orientations (100), (110), (112), (122) was constructed. The stability of the model used was investigated, as a result of which its applicability in these calculations was confirmed.
About the authors
A. I. Pavlov
Bauman Moscow State Technical University
Email: Alex.pav.2001@yandex.ru
Moscow, 105005, Russia
A. I. Kartsev
RUDN University; Computational Center of Far East branch Russian Academy of Sciences
Email: Alex.pav.2001@yandex.ru
Moscow, 117198, Russia; Khabarovsk, 680000, Russia
V. V. Koledov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: Alex.pav.2001@yandex.ru
Moscow, 125009 Russia
P. V. Lega
RUDN University; Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Author for correspondence.
Email: Alex.pav.2001@yandex.ru
Moscow, 117198, Russia; Moscow, 125009 Russia
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