Effect of crystallographic orientation on the phase transition of a finite TiNi shape memory alloy wafer.
- Авторлар: Pavlov A.1, Kartsev A.2,3, Koledov V.4, Lega P.2,4
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Мекемелер:
- Bauman Moscow State Technical University
- RUDN University
- Computational Center of Far East branch Russian Academy of Sciences
- Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
- Шығарылым: Том 68, № 10 (2023)
- Беттер: 1035-1039
- Бөлім: ФИЗИЧЕСКИЕ ПРОЦЕССЫ В ЭЛЕКТРОННЫХ ПРИБОРАХ
- URL: https://journals.rcsi.science/0033-8494/article/view/232592
- DOI: https://doi.org/10.31857/S0033849423100133
- EDN: https://elibrary.ru/DOCWBT
- ID: 232592
Дәйексөз келтіру
Аннотация
A simulation of a TiNi shape memory alloy plate was carried out at various crystallographic orientations using a free package for classical molecular dynamics LAMMPS. It was found that the crystallographic orientation of the plate has a significant effect on the phase transition temperature. The dependence of surface energy on temperature for crystallographic orientations (100), (110), (112), (122) was constructed. The stability of the model used was investigated, as a result of which its applicability in these calculations was confirmed.
Негізгі сөздер
Авторлар туралы
A. Pavlov
Bauman Moscow State Technical University
Email: Alex.pav.2001@yandex.ru
Moscow, 105005, Russia
A. Kartsev
RUDN University; Computational Center of Far East branch Russian Academy of Sciences
Email: Alex.pav.2001@yandex.ru
Moscow, 117198, Russia; Khabarovsk, 680000, Russia
V. Koledov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: Alex.pav.2001@yandex.ru
Moscow, 125009 Russia
P. Lega
RUDN University; Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: Alex.pav.2001@yandex.ru
Moscow, 117198, Russia; Moscow, 125009 Russia
Әдебиет тізімі
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