Development of galvanic isolators on the basis of nanostructures from spin-valve magnetoresistive effect
- 作者: Belyakov P.A.1, Kostyuk D.V.1, Abanin I.E.2, Amelichev V.V.2, Orlov E.P.1, Vasil’ev D.V.1, Kasatkin S.I.3, Murav’ev A.M.3, Krikunov A.I.4, Shamanaev S.V.1
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隶属关系:
- SPE Technology
- SIC Technology Centre
- Trapeznikov Institute of Control Sciences
- Fatran-Avto LLC
- 期: 卷 77, 编号 12 (2016)
- 页面: 2249-2253
- 栏目: Sensors and Systems
- URL: https://journals.rcsi.science/0005-1179/article/view/150504
- DOI: https://doi.org/10.1134/S0005117916120134
- ID: 150504
如何引用文章
详细
In article the basic is constructive-technological decisions applied in galvanic isolators (GI) with giant magnetoresistive by effect are considered. Results of research of spin-valve magnetoresistive (SVMR) nanostructures with an antiferromagnetic film (Ta–FeNiCo–CoFe–Cu–CoFe–FeNiCo–FeMn–Ta) for creation on their basis domestic digital GI are presented. Are received magnetoresistive elements on the basis of the developed technological processes of formation nanostructures with size SVMR of effect 7–8%, at a room temperature.
作者简介
P. Belyakov
SPE Technology
Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Zelenograd, Moscow
D. Kostyuk
SPE Technology
Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Zelenograd, Moscow
I. Abanin
SIC Technology Centre
Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Zelenograd, Moscow
V. Amelichev
SIC Technology Centre
Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Zelenograd, Moscow
E. Orlov
SPE Technology
Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Zelenograd, Moscow
D. Vasil’ev
SPE Technology
Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Zelenograd, Moscow
S. Kasatkin
Trapeznikov Institute of Control Sciences
编辑信件的主要联系方式.
Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Moscow
A. Murav’ev
Trapeznikov Institute of Control Sciences
Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Moscow
A. Krikunov
Fatran-Avto LLC
Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Moscow
S. Shamanaev
SPE Technology
Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Zelenograd, Moscow
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