Development of galvanic isolators on the basis of nanostructures from spin-valve magnetoresistive effect


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In article the basic is constructive-technological decisions applied in galvanic isolators (GI) with giant magnetoresistive by effect are considered. Results of research of spin-valve magnetoresistive (SVMR) nanostructures with an antiferromagnetic film (Ta–FeNiCo–CoFe–Cu–CoFe–FeNiCo–FeMn–Ta) for creation on their basis domestic digital GI are presented. Are received magnetoresistive elements on the basis of the developed technological processes of formation nanostructures with size SVMR of effect 7–8%, at a room temperature.

作者简介

P. Belyakov

SPE Technology

Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Zelenograd, Moscow

D. Kostyuk

SPE Technology

Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Zelenograd, Moscow

I. Abanin

SIC Technology Centre

Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Zelenograd, Moscow

V. Amelichev

SIC Technology Centre

Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Zelenograd, Moscow

E. Orlov

SPE Technology

Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Zelenograd, Moscow

D. Vasil’ev

SPE Technology

Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Zelenograd, Moscow

S. Kasatkin

Trapeznikov Institute of Control Sciences

编辑信件的主要联系方式.
Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Moscow

A. Murav’ev

Trapeznikov Institute of Control Sciences

Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Moscow

A. Krikunov

Fatran-Avto LLC

Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Moscow

S. Shamanaev

SPE Technology

Email: serkasat@ipu.rssi.ru
俄罗斯联邦, Zelenograd, Moscow

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