Development of galvanic isolators on the basis of nanostructures from spin-valve magnetoresistive effect


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Аннотация

In article the basic is constructive-technological decisions applied in galvanic isolators (GI) with giant magnetoresistive by effect are considered. Results of research of spin-valve magnetoresistive (SVMR) nanostructures with an antiferromagnetic film (Ta–FeNiCo–CoFe–Cu–CoFe–FeNiCo–FeMn–Ta) for creation on their basis domestic digital GI are presented. Are received magnetoresistive elements on the basis of the developed technological processes of formation nanostructures with size SVMR of effect 7–8%, at a room temperature.

Авторлар туралы

P. Belyakov

SPE Technology

Email: serkasat@ipu.rssi.ru
Ресей, Zelenograd, Moscow

D. Kostyuk

SPE Technology

Email: serkasat@ipu.rssi.ru
Ресей, Zelenograd, Moscow

I. Abanin

SIC Technology Centre

Email: serkasat@ipu.rssi.ru
Ресей, Zelenograd, Moscow

V. Amelichev

SIC Technology Centre

Email: serkasat@ipu.rssi.ru
Ресей, Zelenograd, Moscow

E. Orlov

SPE Technology

Email: serkasat@ipu.rssi.ru
Ресей, Zelenograd, Moscow

D. Vasil’ev

SPE Technology

Email: serkasat@ipu.rssi.ru
Ресей, Zelenograd, Moscow

S. Kasatkin

Trapeznikov Institute of Control Sciences

Хат алмасуға жауапты Автор.
Email: serkasat@ipu.rssi.ru
Ресей, Moscow

A. Murav’ev

Trapeznikov Institute of Control Sciences

Email: serkasat@ipu.rssi.ru
Ресей, Moscow

A. Krikunov

Fatran-Avto LLC

Email: serkasat@ipu.rssi.ru
Ресей, Moscow

S. Shamanaev

SPE Technology

Email: serkasat@ipu.rssi.ru
Ресей, Zelenograd, Moscow

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