Development of galvanic isolators on the basis of nanostructures from spin-valve magnetoresistive effect


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Abstract

In article the basic is constructive-technological decisions applied in galvanic isolators (GI) with giant magnetoresistive by effect are considered. Results of research of spin-valve magnetoresistive (SVMR) nanostructures with an antiferromagnetic film (Ta–FeNiCo–CoFe–Cu–CoFe–FeNiCo–FeMn–Ta) for creation on their basis domestic digital GI are presented. Are received magnetoresistive elements on the basis of the developed technological processes of formation nanostructures with size SVMR of effect 7–8%, at a room temperature.

About the authors

P. A. Belyakov

SPE Technology

Email: serkasat@ipu.rssi.ru
Russian Federation, Zelenograd, Moscow

D. V. Kostyuk

SPE Technology

Email: serkasat@ipu.rssi.ru
Russian Federation, Zelenograd, Moscow

I. E. Abanin

SIC Technology Centre

Email: serkasat@ipu.rssi.ru
Russian Federation, Zelenograd, Moscow

V. V. Amelichev

SIC Technology Centre

Email: serkasat@ipu.rssi.ru
Russian Federation, Zelenograd, Moscow

E. P. Orlov

SPE Technology

Email: serkasat@ipu.rssi.ru
Russian Federation, Zelenograd, Moscow

D. V. Vasil’ev

SPE Technology

Email: serkasat@ipu.rssi.ru
Russian Federation, Zelenograd, Moscow

S. I. Kasatkin

Trapeznikov Institute of Control Sciences

Author for correspondence.
Email: serkasat@ipu.rssi.ru
Russian Federation, Moscow

A. M. Murav’ev

Trapeznikov Institute of Control Sciences

Email: serkasat@ipu.rssi.ru
Russian Federation, Moscow

A. I. Krikunov

Fatran-Avto LLC

Email: serkasat@ipu.rssi.ru
Russian Federation, Moscow

S. V. Shamanaev

SPE Technology

Email: serkasat@ipu.rssi.ru
Russian Federation, Zelenograd, Moscow

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