Development of galvanic isolators on the basis of nanostructures from spin-valve magnetoresistive effect


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In article the basic is constructive-technological decisions applied in galvanic isolators (GI) with giant magnetoresistive by effect are considered. Results of research of spin-valve magnetoresistive (SVMR) nanostructures with an antiferromagnetic film (Ta–FeNiCo–CoFe–Cu–CoFe–FeNiCo–FeMn–Ta) for creation on their basis domestic digital GI are presented. Are received magnetoresistive elements on the basis of the developed technological processes of formation nanostructures with size SVMR of effect 7–8%, at a room temperature.

Sobre autores

P. Belyakov

SPE Technology

Email: serkasat@ipu.rssi.ru
Rússia, Zelenograd, Moscow

D. Kostyuk

SPE Technology

Email: serkasat@ipu.rssi.ru
Rússia, Zelenograd, Moscow

I. Abanin

SIC Technology Centre

Email: serkasat@ipu.rssi.ru
Rússia, Zelenograd, Moscow

V. Amelichev

SIC Technology Centre

Email: serkasat@ipu.rssi.ru
Rússia, Zelenograd, Moscow

E. Orlov

SPE Technology

Email: serkasat@ipu.rssi.ru
Rússia, Zelenograd, Moscow

D. Vasil’ev

SPE Technology

Email: serkasat@ipu.rssi.ru
Rússia, Zelenograd, Moscow

S. Kasatkin

Trapeznikov Institute of Control Sciences

Autor responsável pela correspondência
Email: serkasat@ipu.rssi.ru
Rússia, Moscow

A. Murav’ev

Trapeznikov Institute of Control Sciences

Email: serkasat@ipu.rssi.ru
Rússia, Moscow

A. Krikunov

Fatran-Avto LLC

Email: serkasat@ipu.rssi.ru
Rússia, Moscow

S. Shamanaev

SPE Technology

Email: serkasat@ipu.rssi.ru
Rússia, Zelenograd, Moscow

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