Email this article Implementation of Terahertz High-Pass Filters Based on All-Metal Microstructures using Deep X-ray Lithography
- Authors: Gentselev A.N.1, Kuznetsov S.A.1,2,3, Dultsev F.N.3,4, Goldenberg B.G.1, Zelinsky A.G.5, Kondratyev V.I.1, Tanygina D.S.2,6
-
Affiliations:
- Budker Institute of Nuclear Physics, Siberian Branch
- Novosibirsk Department of Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Institute of Solid State Chemistry and Mechanochemistry, Siberian Branch
- Far Eastern Federal University
- Issue: Vol 55, No 2 (2019)
- Pages: 115-125
- Section: Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212689
- DOI: https://doi.org/10.3103/S875669901902002X
- ID: 212689
Cite item
Open Access
Access granted
Subscription Access
Abstract
A method for fabricating high-pass terahertz quasi-optical filters in the form of thick (up to 1 mm in thickness) self-bearing copper microstructures of subwavelength topology is described. This method is based on forming a high-aspect-ratio mask of SU-8 resist on a silicon wafer via deep X-ray lithography through a tungsten X-ray mask followed by electroplating a copper layer through the resistive mask. An example of a 212-µm thick structure with a cutoff frequency of 0.42 THz having the geometry of hexagon-shaped through-holes arranged on a triangular lattice is considered. The results of broadband THz characterization and electromagnetic analysis of the structure fabricated are presented.
About the authors
A. N. Gentselev
Budker Institute of Nuclear Physics, Siberian Branch
Author for correspondence.
Email: ang1209@mail.ru
Russian Federation, pr. Akademika Lavrentieva 11, Novosibirsk, 630090
S. A. Kuznetsov
Budker Institute of Nuclear Physics, Siberian Branch; Novosibirsk Department of Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: ang1209@mail.ru
Russian Federation, pr. Akademika Lavrentieva 11, Novosibirsk, 630090; pr. Akademika Lavrentieva 2/1, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
F. N. Dultsev
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: ang1209@mail.ru
Russian Federation, ul. Pirogova 2, Novosibirsk, 630090; pr. Akademika Lavrentieva 13, Novosibirsk, 630090
B. G. Goldenberg
Budker Institute of Nuclear Physics, Siberian Branch
Email: ang1209@mail.ru
Russian Federation, pr. Akademika Lavrentieva 11, Novosibirsk, 630090
A. G. Zelinsky
Institute of Solid State Chemistry and Mechanochemistry, Siberian Branch
Email: ang1209@mail.ru
Russian Federation, ul. Kutateladze 18, Novosibirsk, 630128
V. I. Kondratyev
Budker Institute of Nuclear Physics, Siberian Branch
Email: ang1209@mail.ru
Russian Federation, pr. Akademika Lavrentieva 11, Novosibirsk, 630090
D. S. Tanygina
Novosibirsk Department of Rzhanov Institute of Semiconductor Physics, Siberian Branch; Far Eastern Federal University
Email: ang1209@mail.ru
Russian Federation, pr. Akademika Lavrentieva 2/1, Novosibirsk, 630090; ul. Sukhanova 8, Vladivostok, 690091
Supplementary files
