Implementation of Terahertz High-Pass Filters Based on All-Metal Microstructures using Deep X-ray Lithography


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A method for fabricating high-pass terahertz quasi-optical filters in the form of thick (up to 1 mm in thickness) self-bearing copper microstructures of subwavelength topology is described. This method is based on forming a high-aspect-ratio mask of SU-8 resist on a silicon wafer via deep X-ray lithography through a tungsten X-ray mask followed by electroplating a copper layer through the resistive mask. An example of a 212-µm thick structure with a cutoff frequency of 0.42 THz having the geometry of hexagon-shaped through-holes arranged on a triangular lattice is considered. The results of broadband THz characterization and electromagnetic analysis of the structure fabricated are presented.

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A. Gentselev

Budker Institute of Nuclear Physics, Siberian Branch

编辑信件的主要联系方式.
Email: ang1209@mail.ru
俄罗斯联邦, pr. Akademika Lavrentieva 11, Novosibirsk, 630090

S. Kuznetsov

Budker Institute of Nuclear Physics, Siberian Branch; Novosibirsk Department of Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: ang1209@mail.ru
俄罗斯联邦, pr. Akademika Lavrentieva 11, Novosibirsk, 630090; pr. Akademika Lavrentieva 2/1, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

F. Dultsev

Novosibirsk State University; Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: ang1209@mail.ru
俄罗斯联邦, ul. Pirogova 2, Novosibirsk, 630090; pr. Akademika Lavrentieva 13, Novosibirsk, 630090

B. Goldenberg

Budker Institute of Nuclear Physics, Siberian Branch

Email: ang1209@mail.ru
俄罗斯联邦, pr. Akademika Lavrentieva 11, Novosibirsk, 630090

A. Zelinsky

Institute of Solid State Chemistry and Mechanochemistry, Siberian Branch

Email: ang1209@mail.ru
俄罗斯联邦, ul. Kutateladze 18, Novosibirsk, 630128

V. Kondratyev

Budker Institute of Nuclear Physics, Siberian Branch

Email: ang1209@mail.ru
俄罗斯联邦, pr. Akademika Lavrentieva 11, Novosibirsk, 630090

D. Tanygina

Novosibirsk Department of Rzhanov Institute of Semiconductor Physics, Siberian Branch; Far Eastern Federal University

Email: ang1209@mail.ru
俄罗斯联邦, pr. Akademika Lavrentieva 2/1, Novosibirsk, 630090; ul. Sukhanova 8, Vladivostok, 690091

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