Implementation of Terahertz High-Pass Filters Based on All-Metal Microstructures using Deep X-ray Lithography


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A method for fabricating high-pass terahertz quasi-optical filters in the form of thick (up to 1 mm in thickness) self-bearing copper microstructures of subwavelength topology is described. This method is based on forming a high-aspect-ratio mask of SU-8 resist on a silicon wafer via deep X-ray lithography through a tungsten X-ray mask followed by electroplating a copper layer through the resistive mask. An example of a 212-µm thick structure with a cutoff frequency of 0.42 THz having the geometry of hexagon-shaped through-holes arranged on a triangular lattice is considered. The results of broadband THz characterization and electromagnetic analysis of the structure fabricated are presented.

Sobre autores

A. Gentselev

Budker Institute of Nuclear Physics, Siberian Branch

Autor responsável pela correspondência
Email: ang1209@mail.ru
Rússia, pr. Akademika Lavrentieva 11, Novosibirsk, 630090

S. Kuznetsov

Budker Institute of Nuclear Physics, Siberian Branch; Novosibirsk Department of Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: ang1209@mail.ru
Rússia, pr. Akademika Lavrentieva 11, Novosibirsk, 630090; pr. Akademika Lavrentieva 2/1, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

F. Dultsev

Novosibirsk State University; Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: ang1209@mail.ru
Rússia, ul. Pirogova 2, Novosibirsk, 630090; pr. Akademika Lavrentieva 13, Novosibirsk, 630090

B. Goldenberg

Budker Institute of Nuclear Physics, Siberian Branch

Email: ang1209@mail.ru
Rússia, pr. Akademika Lavrentieva 11, Novosibirsk, 630090

A. Zelinsky

Institute of Solid State Chemistry and Mechanochemistry, Siberian Branch

Email: ang1209@mail.ru
Rússia, ul. Kutateladze 18, Novosibirsk, 630128

V. Kondratyev

Budker Institute of Nuclear Physics, Siberian Branch

Email: ang1209@mail.ru
Rússia, pr. Akademika Lavrentieva 11, Novosibirsk, 630090

D. Tanygina

Novosibirsk Department of Rzhanov Institute of Semiconductor Physics, Siberian Branch; Far Eastern Federal University

Email: ang1209@mail.ru
Rússia, pr. Akademika Lavrentieva 2/1, Novosibirsk, 630090; ul. Sukhanova 8, Vladivostok, 690091

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