Implementation of Terahertz High-Pass Filters Based on All-Metal Microstructures using Deep X-ray Lithography
- Autores: Gentselev A.N.1, Kuznetsov S.A.1,2,3, Dultsev F.N.3,4, Goldenberg B.G.1, Zelinsky A.G.5, Kondratyev V.I.1, Tanygina D.S.2,6
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Afiliações:
- Budker Institute of Nuclear Physics, Siberian Branch
- Novosibirsk Department of Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Institute of Solid State Chemistry and Mechanochemistry, Siberian Branch
- Far Eastern Federal University
- Edição: Volume 55, Nº 2 (2019)
- Páginas: 115-125
- Seção: Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212689
- DOI: https://doi.org/10.3103/S875669901902002X
- ID: 212689
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Resumo
A method for fabricating high-pass terahertz quasi-optical filters in the form of thick (up to 1 mm in thickness) self-bearing copper microstructures of subwavelength topology is described. This method is based on forming a high-aspect-ratio mask of SU-8 resist on a silicon wafer via deep X-ray lithography through a tungsten X-ray mask followed by electroplating a copper layer through the resistive mask. An example of a 212-µm thick structure with a cutoff frequency of 0.42 THz having the geometry of hexagon-shaped through-holes arranged on a triangular lattice is considered. The results of broadband THz characterization and electromagnetic analysis of the structure fabricated are presented.
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Sobre autores
A. Gentselev
Budker Institute of Nuclear Physics, Siberian Branch
Autor responsável pela correspondência
Email: ang1209@mail.ru
Rússia, pr. Akademika Lavrentieva 11, Novosibirsk, 630090
S. Kuznetsov
Budker Institute of Nuclear Physics, Siberian Branch; Novosibirsk Department of Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: ang1209@mail.ru
Rússia, pr. Akademika Lavrentieva 11, Novosibirsk, 630090; pr. Akademika Lavrentieva 2/1, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
F. Dultsev
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: ang1209@mail.ru
Rússia, ul. Pirogova 2, Novosibirsk, 630090; pr. Akademika Lavrentieva 13, Novosibirsk, 630090
B. Goldenberg
Budker Institute of Nuclear Physics, Siberian Branch
Email: ang1209@mail.ru
Rússia, pr. Akademika Lavrentieva 11, Novosibirsk, 630090
A. Zelinsky
Institute of Solid State Chemistry and Mechanochemistry, Siberian Branch
Email: ang1209@mail.ru
Rússia, ul. Kutateladze 18, Novosibirsk, 630128
V. Kondratyev
Budker Institute of Nuclear Physics, Siberian Branch
Email: ang1209@mail.ru
Rússia, pr. Akademika Lavrentieva 11, Novosibirsk, 630090
D. Tanygina
Novosibirsk Department of Rzhanov Institute of Semiconductor Physics, Siberian Branch; Far Eastern Federal University
Email: ang1209@mail.ru
Rússia, pr. Akademika Lavrentieva 2/1, Novosibirsk, 630090; ul. Sukhanova 8, Vladivostok, 690091
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