Vol 53, No 6 (2017)

Results of studying the errors of indirect monitoring by means of computer simulations are reported. The monitoring method is based on measuring spectra of reflection from additional monitoring substrates in a wide spectral range. Special software (Deposition Control Simulator) is developed, which allows one to estimate the influence of the monitoring system parameters (noise of the photodetector array, operating spectral range of the spectrometer and errors of its calibration in terms of wavelengths, drift of the radiation source intensity, and errors in the refractive index of deposited materials) on the random and systematic errors of deposited layer thickness measurements. The direct and inverse problems of multilayer coatings are solved using the OptiReOpt library. Curves of the random and systematic errors of measurements of the deposited layer thickness as functions of the layer thickness are presented for various values of the system parameters. Recommendations are given on using the indirect monitoring method for the purpose of reducing the layer thickness measurement error.

The variation in the shift of spectral structures due to the Zeeman effect in a spatially nonuniform magnetic field has been studied. It has been found that this shift can be varied by changing the width and shape of spectral structures, their forms, and methods and conditions of recording. A method of accounting for magnetic-field nonuniformity for optically thin and thick media has been proposed.

Scanning devices based on multirow focal plane arrays providing increased resolution impose much more stringent requirements on alignment than single-row arrays. This paper presents a new method for measuring and estimating the scanning speed and the angle of orientation of a multirow focal plane array relative to the scanning direction — the parameters that determine the quality of the discrete image formed. The method is based on an analysis of the image of a simple test object — an optical slit. An algorithm for estimating these parameters is proposed which provides high-accuracy estimates under fairly weak requirements for the image quality of the test object. The estimation accuracy was calculated analytically and confirmed by simulation modeling.

It is proposed to use weight coefficients of the bilateral filter to calculate the measure of similarity of image regions in optical flow calculation algorithms. The efficiency of using this measure is studied by an example of a three-dimensional recursive search algorithm. Weight coefficients are used for calculating the optical flow with subpixel accuracy by the Lucas–Kanade algorithm. A possibility of reducing the optical flow calculation error by means of using the proposed approaches is demonstrated by an example of processing of various types of images. A method of choosing the parameters of the weight functions of the bilateral filter is described and analyzed.

A new method of loop closure based on storage of local maps of obstacles and meant for reducing accumulated localization errors is proposed. The advantage of this method in comparison with the earlier one is in the decreased amount of RAM. Testing results for the developed system and comparisons with analogs are presented.

The knowledge of optical and dielectric properties of ferroelectric films, in particular, strontium–barium niobate films, in the terahertz spectral range is needed to use these films as a basis of active elements and structures for detection and control of terahertz radiation. The properties of strontium–barium niobate films with x = 0.5 grown on oriented sapphire substrates with a deposited electrode are studied by the method of terahertz time-domain spectroscopy in the spectral range of 0.2–1.3 THz. It is found that strontium–barium niobate films can be used to develop devices for detection and control of terahertz radiation.

A comparative analysis of the prospects of creating superthin, light-weight, and highly efficient solar cells based on A^IIIB^V/InGaAs and A^IIIB^V/Ge heterostructures is performed. Technological problems and prospects of each variant are discussed. A method of thinning of A^IIIB^V/Ge heterostructures with the use of an effective temporary carrier is proposed. The method allows the process to be performed almost with no risk of heterostructure fracture, thinning of the Ge junction down to several tens of micrometers (or even several micrometers), significant enhancement of the yield of good structures, and also convenient and reliable transfer of thinned solar cells to an arbitrary light and flexible substrate. Such a technology offers a possibility of creating high-efficiency thin and light solar cells for space vehicles on the basis of mass-produced A^IIIB^V/Ge heterostructures.

Unfortunately, there were some misprints, which we want to correct.