Analytical Review of Two-Signal Methods for Measuring the S-Parameters of Two-Port Networks
- Authors: Savel’kaev S.V.1, Litovchenko V.A.2, Zarzhetskaya N.V.1
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Affiliations:
- Siberian State University of Geosystems and Technologies
- Novosibirsk Higher Military Command School
- Issue: Vol 55, No 6 (2019)
- Pages: 564-573
- Section: Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212910
- DOI: https://doi.org/10.3103/S8756699019060050
- ID: 212910
Cite item
Abstract
In this paper, we consider two-signal and modified two-signal methods for measuring the S-parameters of passive two-ports and a method for adequately measuring the S-parameters of two-ports, such as transistors, developed on their basis. The methods are implemented using a coaxial simulator-analyzer of microwave amplifiers and oscillators in its measuring channels matched or mismatched with loads. The field of application and the interrelation between these methods are investigated, and their advantages and disadvantages are discussed. Data on the maximum measurement error of the methods are presented.
About the authors
S. V. Savel’kaev
Siberian State University of Geosystems and Technologies
Author for correspondence.
Email: sergei.savelkaev@yandex.ru
Russian Federation, ul. Plakhotnogo 10, Novosibirsk, 630108
V. A. Litovchenko
Novosibirsk Higher Military Command School
Email: sergei.savelkaev@yandex.ru
Russian Federation, ul. Ivanova 49, Novosibirsk, 630117
N. V. Zarzhetskaya
Siberian State University of Geosystems and Technologies
Email: sergei.savelkaev@yandex.ru
Russian Federation, ul. Plakhotnogo 10, Novosibirsk, 630108
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