Analytical Review of Two-Signal Methods for Measuring the S-Parameters of Two-Port Networks
- 作者: Savel’kaev S.V.1, Litovchenko V.A.2, Zarzhetskaya N.V.1
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隶属关系:
- Siberian State University of Geosystems and Technologies
- Novosibirsk Higher Military Command School
- 期: 卷 55, 编号 6 (2019)
- 页面: 564-573
- 栏目: Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212910
- DOI: https://doi.org/10.3103/S8756699019060050
- ID: 212910
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详细
In this paper, we consider two-signal and modified two-signal methods for measuring the S-parameters of passive two-ports and a method for adequately measuring the S-parameters of two-ports, such as transistors, developed on their basis. The methods are implemented using a coaxial simulator-analyzer of microwave amplifiers and oscillators in its measuring channels matched or mismatched with loads. The field of application and the interrelation between these methods are investigated, and their advantages and disadvantages are discussed. Data on the maximum measurement error of the methods are presented.
作者简介
S. Savel’kaev
Siberian State University of Geosystems and Technologies
编辑信件的主要联系方式.
Email: sergei.savelkaev@yandex.ru
俄罗斯联邦, ul. Plakhotnogo 10, Novosibirsk, 630108
V. Litovchenko
Novosibirsk Higher Military Command School
Email: sergei.savelkaev@yandex.ru
俄罗斯联邦, ul. Ivanova 49, Novosibirsk, 630117
N. Zarzhetskaya
Siberian State University of Geosystems and Technologies
Email: sergei.savelkaev@yandex.ru
俄罗斯联邦, ul. Plakhotnogo 10, Novosibirsk, 630108
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