Analytical Review of Two-Signal Methods for Measuring the S-Parameters of Two-Port Networks
- Авторлар: Savel’kaev S.V.1, Litovchenko V.A.2, Zarzhetskaya N.V.1
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Мекемелер:
- Siberian State University of Geosystems and Technologies
- Novosibirsk Higher Military Command School
- Шығарылым: Том 55, № 6 (2019)
- Беттер: 564-573
- Бөлім: Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212910
- DOI: https://doi.org/10.3103/S8756699019060050
- ID: 212910
Дәйексөз келтіру
Аннотация
In this paper, we consider two-signal and modified two-signal methods for measuring the S-parameters of passive two-ports and a method for adequately measuring the S-parameters of two-ports, such as transistors, developed on their basis. The methods are implemented using a coaxial simulator-analyzer of microwave amplifiers and oscillators in its measuring channels matched or mismatched with loads. The field of application and the interrelation between these methods are investigated, and their advantages and disadvantages are discussed. Data on the maximum measurement error of the methods are presented.
Авторлар туралы
S. Savel’kaev
Siberian State University of Geosystems and Technologies
Хат алмасуға жауапты Автор.
Email: sergei.savelkaev@yandex.ru
Ресей, ul. Plakhotnogo 10, Novosibirsk, 630108
V. Litovchenko
Novosibirsk Higher Military Command School
Email: sergei.savelkaev@yandex.ru
Ресей, ul. Ivanova 49, Novosibirsk, 630117
N. Zarzhetskaya
Siberian State University of Geosystems and Technologies
Email: sergei.savelkaev@yandex.ru
Ресей, ul. Plakhotnogo 10, Novosibirsk, 630108
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