Отправить статью по E-mail Specific Features of Temperature Dependence of Graphene Oxide Resistance
- Авторы: Babaev A.A.1, Zobov M.E.1, Kornilov D.Y.2, Tkachev S.V.2, Terukov E.I.3, Levitskii V.S.4
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Учреждения:
- Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
- OOO AkKo Lab
- Ioffe Institute
- Research and Development Center for Thin-Film Technologies in Energetics
- Выпуск: Том 55, № 1 (2019)
- Страницы: 50-54
- Раздел: Nanoscale and Nanostructured Materials and Coatings
- URL: https://journals.rcsi.science/2070-2051/article/view/204784
- DOI: https://doi.org/10.1134/S2070205119010052
- ID: 204784
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Аннотация
Temperature dependence of graphene oxide resistance during continuous heating and cooling under argon atmosphere at 300–550 K and Raman spectra were studied. Resistance is constant within 300–370 K during cooling. It is thermostable under further heating. Temperature dependence of resistance changes according to activation law within 370–550 K. The decrease of resistance at the increase is related to the removal of functional oxygen-containing groups, which is proved by the results of Raman spectra.
Об авторах
A. Babaev
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: babaev-arif@mail.ru
Россия, Makhachkala, 367003
M. Zobov
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: babaev-arif@mail.ru
Россия, Makhachkala, 367003
D. Kornilov
OOO AkKo Lab
Email: babaev-arif@mail.ru
Россия, Moscow, 129110
S. Tkachev
OOO AkKo Lab
Email: babaev-arif@mail.ru
Россия, Moscow, 129110
E. Terukov
Ioffe Institute
Email: babaev-arif@mail.ru
Россия, St. Petersburg, 194021
V. Levitskii
Research and Development Center for Thin-Film Technologies in Energetics
Email: babaev-arif@mail.ru
Россия, St. Petersburg, 194064
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