Мақаланы E-mail арқылы жіберу Specific Features of Temperature Dependence of Graphene Oxide Resistance
- Авторлар: Babaev A.A.1, Zobov M.E.1, Kornilov D.Y.2, Tkachev S.V.2, Terukov E.I.3, Levitskii V.S.4
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Мекемелер:
- Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
- OOO AkKo Lab
- Ioffe Institute
- Research and Development Center for Thin-Film Technologies in Energetics
- Шығарылым: Том 55, № 1 (2019)
- Беттер: 50-54
- Бөлім: Nanoscale and Nanostructured Materials and Coatings
- URL: https://journals.rcsi.science/2070-2051/article/view/204784
- DOI: https://doi.org/10.1134/S2070205119010052
- ID: 204784
Дәйексөз келтіру
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Аннотация
Temperature dependence of graphene oxide resistance during continuous heating and cooling under argon atmosphere at 300–550 K and Raman spectra were studied. Resistance is constant within 300–370 K during cooling. It is thermostable under further heating. Temperature dependence of resistance changes according to activation law within 370–550 K. The decrease of resistance at the increase is related to the removal of functional oxygen-containing groups, which is proved by the results of Raman spectra.
Авторлар туралы
A. Babaev
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: babaev-arif@mail.ru
Ресей, Makhachkala, 367003
M. Zobov
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: babaev-arif@mail.ru
Ресей, Makhachkala, 367003
D. Kornilov
OOO AkKo Lab
Email: babaev-arif@mail.ru
Ресей, Moscow, 129110
S. Tkachev
OOO AkKo Lab
Email: babaev-arif@mail.ru
Ресей, Moscow, 129110
E. Terukov
Ioffe Institute
Email: babaev-arif@mail.ru
Ресей, St. Petersburg, 194021
V. Levitskii
Research and Development Center for Thin-Film Technologies in Energetics
Email: babaev-arif@mail.ru
Ресей, St. Petersburg, 194064
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