Specific Features of Temperature Dependence of Graphene Oxide Resistance
- 作者: Babaev A.A.1, Zobov M.E.1, Kornilov D.Y.2, Tkachev S.V.2, Terukov E.I.3, Levitskii V.S.4
-
隶属关系:
- Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
- OOO AkKo Lab
- Ioffe Institute
- Research and Development Center for Thin-Film Technologies in Energetics
- 期: 卷 55, 编号 1 (2019)
- 页面: 50-54
- 栏目: Nanoscale and Nanostructured Materials and Coatings
- URL: https://journals.rcsi.science/2070-2051/article/view/204784
- DOI: https://doi.org/10.1134/S2070205119010052
- ID: 204784
如何引用文章
详细
Temperature dependence of graphene oxide resistance during continuous heating and cooling under argon atmosphere at 300–550 K and Raman spectra were studied. Resistance is constant within 300–370 K during cooling. It is thermostable under further heating. Temperature dependence of resistance changes according to activation law within 370–550 K. The decrease of resistance at the increase is related to the removal of functional oxygen-containing groups, which is proved by the results of Raman spectra.
作者简介
A. Babaev
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: babaev-arif@mail.ru
俄罗斯联邦, Makhachkala, 367003
M. Zobov
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: babaev-arif@mail.ru
俄罗斯联邦, Makhachkala, 367003
D. Kornilov
OOO AkKo Lab
Email: babaev-arif@mail.ru
俄罗斯联邦, Moscow, 129110
S. Tkachev
OOO AkKo Lab
Email: babaev-arif@mail.ru
俄罗斯联邦, Moscow, 129110
E. Terukov
Ioffe Institute
Email: babaev-arif@mail.ru
俄罗斯联邦, St. Petersburg, 194021
V. Levitskii
Research and Development Center for Thin-Film Technologies in Energetics
Email: babaev-arif@mail.ru
俄罗斯联邦, St. Petersburg, 194064
补充文件
