Enviar artigo por via de e-mail Specific Features of Temperature Dependence of Graphene Oxide Resistance
- Autores: Babaev A.A.1, Zobov M.E.1, Kornilov D.Y.2, Tkachev S.V.2, Terukov E.I.3, Levitskii V.S.4
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Afiliações:
- Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
- OOO AkKo Lab
- Ioffe Institute
- Research and Development Center for Thin-Film Technologies in Energetics
- Edição: Volume 55, Nº 1 (2019)
- Páginas: 50-54
- Seção: Nanoscale and Nanostructured Materials and Coatings
- URL: https://journals.rcsi.science/2070-2051/article/view/204784
- DOI: https://doi.org/10.1134/S2070205119010052
- ID: 204784
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Resumo
Temperature dependence of graphene oxide resistance during continuous heating and cooling under argon atmosphere at 300–550 K and Raman spectra were studied. Resistance is constant within 300–370 K during cooling. It is thermostable under further heating. Temperature dependence of resistance changes according to activation law within 370–550 K. The decrease of resistance at the increase is related to the removal of functional oxygen-containing groups, which is proved by the results of Raman spectra.
Sobre autores
A. Babaev
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Autor responsável pela correspondência
Email: babaev-arif@mail.ru
Rússia, Makhachkala, 367003
M. Zobov
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: babaev-arif@mail.ru
Rússia, Makhachkala, 367003
D. Kornilov
OOO AkKo Lab
Email: babaev-arif@mail.ru
Rússia, Moscow, 129110
S. Tkachev
OOO AkKo Lab
Email: babaev-arif@mail.ru
Rússia, Moscow, 129110
E. Terukov
Ioffe Institute
Email: babaev-arif@mail.ru
Rússia, St. Petersburg, 194021
V. Levitskii
Research and Development Center for Thin-Film Technologies in Energetics
Email: babaev-arif@mail.ru
Rússia, St. Petersburg, 194064
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