IR Emission of Single-Crystal Silicon Excited by Broadband Light


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Аннотация

Room-temperature mid-IR emission from single-crystal silicon exposed to broadband (320 to 700 nm) light with power up to 150 m W has been revealed by Fourier transform IR emission spectroscopy. It is shown that broadband optical excitation significantly enhances IR emission in comparison with thermal emission. Spectral lines of lattice vibrations caused by interaction between combinations of longitudinal and transverse optical or acoustic phonons are identified in experimental IR emission spectra.

Авторлар туралы

E. Terpugov

Institute of Cell Biophysics

Хат алмасуға жауапты Автор.
Email: el_terpugov@rambler.ru
Ресей, ul. Institutskaya 3, Pushchino, Moscow oblast, 142290

O. Degtyareva

Institute of Cell Biophysics

Email: el_terpugov@rambler.ru
Ресей, ul. Institutskaya 3, Pushchino, Moscow oblast, 142290

V. Gorelik

Lebedev Physical Institute

Email: el_terpugov@rambler.ru
Ресей, Leninskiy pr. 53, Moscow, 119991

Yu. Novikov

Prokhorov General Physics Institute of the Russian Academy of Sciences; National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Email: el_terpugov@rambler.ru
Ресей, ul. Vavilova 38, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409

V. Savranskiy

Prokhorov General Physics Institute of the Russian Academy of Sciences

Email: el_terpugov@rambler.ru
Ресей, ul. Vavilova 38, Moscow, 119991

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