Enviar artigo por via de e-mail IR Emission of Single-Crystal Silicon Excited by Broadband Light
- Autores: Terpugov E.L.1, Degtyareva O.V.1, Gorelik V.S.2, Novikov Y.A.3,4, Savranskiy V.V.3
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Afiliações:
- Institute of Cell Biophysics
- Lebedev Physical Institute
- Prokhorov General Physics Institute of the Russian Academy of Sciences
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Edição: Volume 26, Nº 3 (2018)
- Páginas: 207-213
- Seção: Broadband Excitation of IR Radiation
- URL: https://journals.rcsi.science/1541-308X/article/view/218010
- DOI: https://doi.org/10.3103/S1541308X18030056
- ID: 218010
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Resumo
Room-temperature mid-IR emission from single-crystal silicon exposed to broadband (320 to 700 nm) light with power up to 150 m W has been revealed by Fourier transform IR emission spectroscopy. It is shown that broadband optical excitation significantly enhances IR emission in comparison with thermal emission. Spectral lines of lattice vibrations caused by interaction between combinations of longitudinal and transverse optical or acoustic phonons are identified in experimental IR emission spectra.
Sobre autores
E. Terpugov
Institute of Cell Biophysics
Autor responsável pela correspondência
Email: el_terpugov@rambler.ru
Rússia, ul. Institutskaya 3, Pushchino, Moscow oblast, 142290
O. Degtyareva
Institute of Cell Biophysics
Email: el_terpugov@rambler.ru
Rússia, ul. Institutskaya 3, Pushchino, Moscow oblast, 142290
V. Gorelik
Lebedev Physical Institute
Email: el_terpugov@rambler.ru
Rússia, Leninskiy pr. 53, Moscow, 119991
Yu. Novikov
Prokhorov General Physics Institute of the Russian Academy of Sciences; National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: el_terpugov@rambler.ru
Rússia, ul. Vavilova 38, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409
V. Savranskiy
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: el_terpugov@rambler.ru
Rússia, ul. Vavilova 38, Moscow, 119991
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