IR Emission of Single-Crystal Silicon Excited by Broadband Light


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

Room-temperature mid-IR emission from single-crystal silicon exposed to broadband (320 to 700 nm) light with power up to 150 m W has been revealed by Fourier transform IR emission spectroscopy. It is shown that broadband optical excitation significantly enhances IR emission in comparison with thermal emission. Spectral lines of lattice vibrations caused by interaction between combinations of longitudinal and transverse optical or acoustic phonons are identified in experimental IR emission spectra.

About the authors

E. L. Terpugov

Institute of Cell Biophysics

Author for correspondence.
Email: el_terpugov@rambler.ru
Russian Federation, ul. Institutskaya 3, Pushchino, Moscow oblast, 142290

O. V. Degtyareva

Institute of Cell Biophysics

Email: el_terpugov@rambler.ru
Russian Federation, ul. Institutskaya 3, Pushchino, Moscow oblast, 142290

V. S. Gorelik

Lebedev Physical Institute

Email: el_terpugov@rambler.ru
Russian Federation, Leninskiy pr. 53, Moscow, 119991

Yu. A. Novikov

Prokhorov General Physics Institute of the Russian Academy of Sciences; National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Email: el_terpugov@rambler.ru
Russian Federation, ul. Vavilova 38, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409

V. V. Savranskiy

Prokhorov General Physics Institute of the Russian Academy of Sciences

Email: el_terpugov@rambler.ru
Russian Federation, ul. Vavilova 38, Moscow, 119991

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2018 Allerton Press, Inc.