电邮这篇文章 IR Emission of Single-Crystal Silicon Excited by Broadband Light
- 作者: Terpugov E.L.1, Degtyareva O.V.1, Gorelik V.S.2, Novikov Y.A.3,4, Savranskiy V.V.3
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隶属关系:
- Institute of Cell Biophysics
- Lebedev Physical Institute
- Prokhorov General Physics Institute of the Russian Academy of Sciences
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- 期: 卷 26, 编号 3 (2018)
- 页面: 207-213
- 栏目: Broadband Excitation of IR Radiation
- URL: https://journals.rcsi.science/1541-308X/article/view/218010
- DOI: https://doi.org/10.3103/S1541308X18030056
- ID: 218010
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详细
Room-temperature mid-IR emission from single-crystal silicon exposed to broadband (320 to 700 nm) light with power up to 150 m W has been revealed by Fourier transform IR emission spectroscopy. It is shown that broadband optical excitation significantly enhances IR emission in comparison with thermal emission. Spectral lines of lattice vibrations caused by interaction between combinations of longitudinal and transverse optical or acoustic phonons are identified in experimental IR emission spectra.
作者简介
E. Terpugov
Institute of Cell Biophysics
编辑信件的主要联系方式.
Email: el_terpugov@rambler.ru
俄罗斯联邦, ul. Institutskaya 3, Pushchino, Moscow oblast, 142290
O. Degtyareva
Institute of Cell Biophysics
Email: el_terpugov@rambler.ru
俄罗斯联邦, ul. Institutskaya 3, Pushchino, Moscow oblast, 142290
V. Gorelik
Lebedev Physical Institute
Email: el_terpugov@rambler.ru
俄罗斯联邦, Leninskiy pr. 53, Moscow, 119991
Yu. Novikov
Prokhorov General Physics Institute of the Russian Academy of Sciences; National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: el_terpugov@rambler.ru
俄罗斯联邦, ul. Vavilova 38, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409
V. Savranskiy
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: el_terpugov@rambler.ru
俄罗斯联邦, ul. Vavilova 38, Moscow, 119991
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