X-ray emission spectroscopy and theoretical study of the electronic structure of hexamethyldisiloxane and octamethylcyclotetrasiloxane
- 作者: Danilenko T.1, Tatevosyan M.1, Vlasenko V.1
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隶属关系:
- Research Institute of Physics
- 期: 卷 87, 编号 5 (2017)
- 页面: 923-928
- 栏目: Article
- URL: https://journals.rcsi.science/1070-3632/article/view/219662
- DOI: https://doi.org/10.1134/S107036321705005X
- ID: 219662
如何引用文章
详细
Electronic structure of hexamethyldisiloxane and octamethylcyclotetrasiloxane has been studied by means of X-ray emission spectroscopy and quantum-chemical simulation at the density functional theory level. From the analysis of the fine structure of X-ray emission SiKβ1-spectra and simulated densities of electronic states, the special features of chemical interactions of Si, O, and C atoms in these molecules are determined.
作者简介
T. Danilenko
Research Institute of Physics
编辑信件的主要联系方式.
Email: tdanil1982@yandex.ru
俄罗斯联邦, pr. Stachki 194, Rostov-on-Don, 344090
M. Tatevosyan
Research Institute of Physics
Email: tdanil1982@yandex.ru
俄罗斯联邦, pr. Stachki 194, Rostov-on-Don, 344090
V. Vlasenko
Research Institute of Physics
Email: tdanil1982@yandex.ru
俄罗斯联邦, pr. Stachki 194, Rostov-on-Don, 344090