X-ray emission spectroscopy and theoretical study of the electronic structure of hexamethyldisiloxane and octamethylcyclotetrasiloxane
- Авторлар: Danilenko T.1, Tatevosyan M.1, Vlasenko V.1
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Мекемелер:
- Research Institute of Physics
- Шығарылым: Том 87, № 5 (2017)
- Беттер: 923-928
- Бөлім: Article
- URL: https://journals.rcsi.science/1070-3632/article/view/219662
- DOI: https://doi.org/10.1134/S107036321705005X
- ID: 219662
Дәйексөз келтіру
Аннотация
Electronic structure of hexamethyldisiloxane and octamethylcyclotetrasiloxane has been studied by means of X-ray emission spectroscopy and quantum-chemical simulation at the density functional theory level. From the analysis of the fine structure of X-ray emission SiKβ1-spectra and simulated densities of electronic states, the special features of chemical interactions of Si, O, and C atoms in these molecules are determined.
Авторлар туралы
T. Danilenko
Research Institute of Physics
Хат алмасуға жауапты Автор.
Email: tdanil1982@yandex.ru
Ресей, pr. Stachki 194, Rostov-on-Don, 344090
M. Tatevosyan
Research Institute of Physics
Email: tdanil1982@yandex.ru
Ресей, pr. Stachki 194, Rostov-on-Don, 344090
V. Vlasenko
Research Institute of Physics
Email: tdanil1982@yandex.ru
Ресей, pr. Stachki 194, Rostov-on-Don, 344090