Atomic Layer Deposition of Aluminum Nitride and Oxynitride on Silicon Using Tris(dimethylamido)aluminum, Ammonia, and Water
- Autores: Abdulagatov A.1, Amashaev R.1, Ashurbekova K.1, Ashurbekova K.1, Rabadanov M.1, Abdulagatov I.1
-
Afiliações:
- Dagestan State University
- Edição: Volume 88, Nº 8 (2018)
- Páginas: 1699-1706
- Seção: Article
- URL: https://journals.rcsi.science/1070-3632/article/view/222375
- DOI: https://doi.org/10.1134/S1070363218080236
- ID: 222375
Citar
Resumo
Thin films of aluminum nitride and oxynitride were deposited by atomic layer deposition (ALD) in the temperature range from 170 to 290°C (optimal deposition temperature 200–230°C). Tris(dimethylamido) aluminum and ammonia were used as precursors for the atomic layer deposition of aluminum nitride (AlN). The average AlN film thickness per ALD cycle (deposition rate) at 200°C was ~0.8 Å. Films were deposited on a silicon <100> substracte with a native oxide layer. The N/Al atomic concentration ratio in the obtained films was ~1.3. Aluminum oxynitride films obtained by periodical dose of water vapor in the course of atomic layer deposition of AlN at 200°C. The composition of the deposited oxynitride films was Al0.5O0.43N0.07.
Palavras-chave
Sobre autores
A. Abdulagatov
Dagestan State University
Email: ilmutdina@gmail.com
Rússia, ul. Gadzhieva 43-a, Makhachkala, 367000
R. Amashaev
Dagestan State University
Email: ilmutdina@gmail.com
Rússia, ul. Gadzhieva 43-a, Makhachkala, 367000
Kr. Ashurbekova
Dagestan State University
Email: ilmutdina@gmail.com
Rússia, ul. Gadzhieva 43-a, Makhachkala, 367000
K. Ashurbekova
Dagestan State University
Email: ilmutdina@gmail.com
Rússia, ul. Gadzhieva 43-a, Makhachkala, 367000
M. Rabadanov
Dagestan State University
Email: ilmutdina@gmail.com
Rússia, ul. Gadzhieva 43-a, Makhachkala, 367000
I. Abdulagatov
Dagestan State University
Autor responsável pela correspondência
Email: ilmutdina@gmail.com
Rússia, ul. Gadzhieva 43-a, Makhachkala, 367000