Atomic Layer Deposition of Aluminum Nitride and Oxynitride on Silicon Using Tris(dimethylamido)aluminum, Ammonia, and Water
- Авторы: Abdulagatov A.1, Amashaev R.1, Ashurbekova K.1, Ashurbekova K.1, Rabadanov M.1, Abdulagatov I.1
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Учреждения:
- Dagestan State University
- Выпуск: Том 88, № 8 (2018)
- Страницы: 1699-1706
- Раздел: Article
- URL: https://journals.rcsi.science/1070-3632/article/view/222375
- DOI: https://doi.org/10.1134/S1070363218080236
- ID: 222375
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Аннотация
Thin films of aluminum nitride and oxynitride were deposited by atomic layer deposition (ALD) in the temperature range from 170 to 290°C (optimal deposition temperature 200–230°C). Tris(dimethylamido) aluminum and ammonia were used as precursors for the atomic layer deposition of aluminum nitride (AlN). The average AlN film thickness per ALD cycle (deposition rate) at 200°C was ~0.8 Å. Films were deposited on a silicon <100> substracte with a native oxide layer. The N/Al atomic concentration ratio in the obtained films was ~1.3. Aluminum oxynitride films obtained by periodical dose of water vapor in the course of atomic layer deposition of AlN at 200°C. The composition of the deposited oxynitride films was Al0.5O0.43N0.07.
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Об авторах
A. Abdulagatov
Dagestan State University
Email: ilmutdina@gmail.com
Россия, ul. Gadzhieva 43-a, Makhachkala, 367000
R. Amashaev
Dagestan State University
Email: ilmutdina@gmail.com
Россия, ul. Gadzhieva 43-a, Makhachkala, 367000
Kr. Ashurbekova
Dagestan State University
Email: ilmutdina@gmail.com
Россия, ul. Gadzhieva 43-a, Makhachkala, 367000
K. Ashurbekova
Dagestan State University
Email: ilmutdina@gmail.com
Россия, ul. Gadzhieva 43-a, Makhachkala, 367000
M. Rabadanov
Dagestan State University
Email: ilmutdina@gmail.com
Россия, ul. Gadzhieva 43-a, Makhachkala, 367000
I. Abdulagatov
Dagestan State University
Автор, ответственный за переписку.
Email: ilmutdina@gmail.com
Россия, ul. Gadzhieva 43-a, Makhachkala, 367000