X-ray emission spectroscopy and theoretical study of the electronic structure of hexamethyldisiloxane and octamethylcyclotetrasiloxane
- Authors: Danilenko T.N.1, Tatevosyan M.M.1, Vlasenko V.G.1
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Affiliations:
- Research Institute of Physics
- Issue: Vol 87, No 5 (2017)
- Pages: 923-928
- Section: Article
- URL: https://journals.rcsi.science/1070-3632/article/view/219662
- DOI: https://doi.org/10.1134/S107036321705005X
- ID: 219662
Cite item
Abstract
Electronic structure of hexamethyldisiloxane and octamethylcyclotetrasiloxane has been studied by means of X-ray emission spectroscopy and quantum-chemical simulation at the density functional theory level. From the analysis of the fine structure of X-ray emission SiKβ1-spectra and simulated densities of electronic states, the special features of chemical interactions of Si, O, and C atoms in these molecules are determined.
About the authors
T. N. Danilenko
Research Institute of Physics
Author for correspondence.
Email: tdanil1982@yandex.ru
Russian Federation, pr. Stachki 194, Rostov-on-Don, 344090
M. M. Tatevosyan
Research Institute of Physics
Email: tdanil1982@yandex.ru
Russian Federation, pr. Stachki 194, Rostov-on-Don, 344090
V. G. Vlasenko
Research Institute of Physics
Email: tdanil1982@yandex.ru
Russian Federation, pr. Stachki 194, Rostov-on-Don, 344090