X-ray emission spectroscopy and theoretical study of the electronic structure of hexamethyldisiloxane and octamethylcyclotetrasiloxane


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Abstract

Electronic structure of hexamethyldisiloxane and octamethylcyclotetrasiloxane has been studied by means of X-ray emission spectroscopy and quantum-chemical simulation at the density functional theory level. From the analysis of the fine structure of X-ray emission SiKβ1-spectra and simulated densities of electronic states, the special features of chemical interactions of Si, O, and C atoms in these molecules are determined.

About the authors

T. N. Danilenko

Research Institute of Physics

Author for correspondence.
Email: tdanil1982@yandex.ru
Russian Federation, pr. Stachki 194, Rostov-on-Don, 344090

M. M. Tatevosyan

Research Institute of Physics

Email: tdanil1982@yandex.ru
Russian Federation, pr. Stachki 194, Rostov-on-Don, 344090

V. G. Vlasenko

Research Institute of Physics

Email: tdanil1982@yandex.ru
Russian Federation, pr. Stachki 194, Rostov-on-Don, 344090


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