Enviar artigo por via de e-mail Non-Stationary Photovoltage in Materials Science of Wide Band-Gap Semiconductors of Modern Adaptive Optics and Optoelectronics
- Autores: Bryushinin M.A.1, Sokolov I.A.1, Zavestovskaya I.N.2,3, Romashko R.V.4, Kul’chin Y.N.3,4
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Afiliações:
- Ioffe Institute
- Lebedev Physical Institute
- National Research Nuclear University “MEPhI”
- Institute of Automation and Control Processes
- Edição: Volume 46, Nº 12 (2019)
- Páginas: 387-389
- Seção: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/229130
- DOI: https://doi.org/10.3103/S1068335619120054
- ID: 229130
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Resumo
Non-stationary photovoltage excitation in silicon carbide and gallium oxide crystals is studied. The signal transient responses are measured, and the photoelectric parameters necessary for developing adaptive photodetectors, i.e., the specific photoconductivity, Maxwell relaxation time, and diffusion length of carrier transport, are determined. The sensitivity of the photodetector based on gallium oxide is determined.
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Sobre autores
M. Bryushinin
Ioffe Institute
Autor responsável pela correspondência
Email: mb@mail.ioffe.ru
Rússia, St. Petersburg, 194021
I. Sokolov
Ioffe Institute
Email: mb@mail.ioffe.ru
Rússia, St. Petersburg, 194021
I. Zavestovskaya
Lebedev Physical Institute; National Research Nuclear University “MEPhI”
Email: mb@mail.ioffe.ru
Rússia, 53 Leninskii Pr., Moscow, 119991; 31 Kashirskoe Sh., Moscow, 115409
R. Romashko
Institute of Automation and Control Processes
Email: mb@mail.ioffe.ru
Rússia, 5 Radio St., Vladivostok, 690041
Yu. Kul’chin
National Research Nuclear University “MEPhI”; Institute of Automation and Control Processes
Email: mb@mail.ioffe.ru
Rússia, 31 Kashirskoe Sh., Moscow, 115409; 5 Radio St., Vladivostok, 690041
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