Email this article Non-Stationary Photovoltage in Materials Science of Wide Band-Gap Semiconductors of Modern Adaptive Optics and Optoelectronics
- Authors: Bryushinin M.A.1, Sokolov I.A.1, Zavestovskaya I.N.2,3, Romashko R.V.4, Kul’chin Y.N.3,4
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Affiliations:
- Ioffe Institute
- Lebedev Physical Institute
- National Research Nuclear University “MEPhI”
- Institute of Automation and Control Processes
- Issue: Vol 46, No 12 (2019)
- Pages: 387-389
- Section: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/229130
- DOI: https://doi.org/10.3103/S1068335619120054
- ID: 229130
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Abstract
Non-stationary photovoltage excitation in silicon carbide and gallium oxide crystals is studied. The signal transient responses are measured, and the photoelectric parameters necessary for developing adaptive photodetectors, i.e., the specific photoconductivity, Maxwell relaxation time, and diffusion length of carrier transport, are determined. The sensitivity of the photodetector based on gallium oxide is determined.
About the authors
M. A. Bryushinin
Ioffe Institute
Author for correspondence.
Email: mb@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. A. Sokolov
Ioffe Institute
Email: mb@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. N. Zavestovskaya
Lebedev Physical Institute; National Research Nuclear University “MEPhI”
Email: mb@mail.ioffe.ru
Russian Federation, 53 Leninskii Pr., Moscow, 119991; 31 Kashirskoe Sh., Moscow, 115409
R. V. Romashko
Institute of Automation and Control Processes
Email: mb@mail.ioffe.ru
Russian Federation, 5 Radio St., Vladivostok, 690041
Yu. N. Kul’chin
National Research Nuclear University “MEPhI”; Institute of Automation and Control Processes
Email: mb@mail.ioffe.ru
Russian Federation, 31 Kashirskoe Sh., Moscow, 115409; 5 Radio St., Vladivostok, 690041
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