Мақаланы E-mail арқылы жіберу Non-Stationary Photovoltage in Materials Science of Wide Band-Gap Semiconductors of Modern Adaptive Optics and Optoelectronics
- Авторлар: Bryushinin M.A.1, Sokolov I.A.1, Zavestovskaya I.N.2,3, Romashko R.V.4, Kul’chin Y.N.3,4
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Мекемелер:
- Ioffe Institute
- Lebedev Physical Institute
- National Research Nuclear University “MEPhI”
- Institute of Automation and Control Processes
- Шығарылым: Том 46, № 12 (2019)
- Беттер: 387-389
- Бөлім: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/229130
- DOI: https://doi.org/10.3103/S1068335619120054
- ID: 229130
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Аннотация
Non-stationary photovoltage excitation in silicon carbide and gallium oxide crystals is studied. The signal transient responses are measured, and the photoelectric parameters necessary for developing adaptive photodetectors, i.e., the specific photoconductivity, Maxwell relaxation time, and diffusion length of carrier transport, are determined. The sensitivity of the photodetector based on gallium oxide is determined.
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Авторлар туралы
M. Bryushinin
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: mb@mail.ioffe.ru
Ресей, St. Petersburg, 194021
I. Sokolov
Ioffe Institute
Email: mb@mail.ioffe.ru
Ресей, St. Petersburg, 194021
I. Zavestovskaya
Lebedev Physical Institute; National Research Nuclear University “MEPhI”
Email: mb@mail.ioffe.ru
Ресей, 53 Leninskii Pr., Moscow, 119991; 31 Kashirskoe Sh., Moscow, 115409
R. Romashko
Institute of Automation and Control Processes
Email: mb@mail.ioffe.ru
Ресей, 5 Radio St., Vladivostok, 690041
Yu. Kul’chin
National Research Nuclear University “MEPhI”; Institute of Automation and Control Processes
Email: mb@mail.ioffe.ru
Ресей, 31 Kashirskoe Sh., Moscow, 115409; 5 Radio St., Vladivostok, 690041
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