Отправить статью по E-mail Non-Stationary Photovoltage in Materials Science of Wide Band-Gap Semiconductors of Modern Adaptive Optics and Optoelectronics
- Авторы: Bryushinin M.A.1, Sokolov I.A.1, Zavestovskaya I.N.2,3, Romashko R.V.4, Kul’chin Y.N.3,4
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Учреждения:
- Ioffe Institute
- Lebedev Physical Institute
- National Research Nuclear University “MEPhI”
- Institute of Automation and Control Processes
- Выпуск: Том 46, № 12 (2019)
- Страницы: 387-389
- Раздел: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/229130
- DOI: https://doi.org/10.3103/S1068335619120054
- ID: 229130
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Аннотация
Non-stationary photovoltage excitation in silicon carbide and gallium oxide crystals is studied. The signal transient responses are measured, and the photoelectric parameters necessary for developing adaptive photodetectors, i.e., the specific photoconductivity, Maxwell relaxation time, and diffusion length of carrier transport, are determined. The sensitivity of the photodetector based on gallium oxide is determined.
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M. Bryushinin
Ioffe Institute
Автор, ответственный за переписку.
Email: mb@mail.ioffe.ru
Россия, St. Petersburg, 194021
I. Sokolov
Ioffe Institute
Email: mb@mail.ioffe.ru
Россия, St. Petersburg, 194021
I. Zavestovskaya
Lebedev Physical Institute; National Research Nuclear University “MEPhI”
Email: mb@mail.ioffe.ru
Россия, 53 Leninskii Pr., Moscow, 119991; 31 Kashirskoe Sh., Moscow, 115409
R. Romashko
Institute of Automation and Control Processes
Email: mb@mail.ioffe.ru
Россия, 5 Radio St., Vladivostok, 690041
Yu. Kul’chin
National Research Nuclear University “MEPhI”; Institute of Automation and Control Processes
Email: mb@mail.ioffe.ru
Россия, 31 Kashirskoe Sh., Moscow, 115409; 5 Radio St., Vladivostok, 690041
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