电邮这篇文章 Non-Stationary Photovoltage in Materials Science of Wide Band-Gap Semiconductors of Modern Adaptive Optics and Optoelectronics
- 作者: Bryushinin M.A.1, Sokolov I.A.1, Zavestovskaya I.N.2,3, Romashko R.V.4, Kul’chin Y.N.3,4
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隶属关系:
- Ioffe Institute
- Lebedev Physical Institute
- National Research Nuclear University “MEPhI”
- Institute of Automation and Control Processes
- 期: 卷 46, 编号 12 (2019)
- 页面: 387-389
- 栏目: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/229130
- DOI: https://doi.org/10.3103/S1068335619120054
- ID: 229130
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详细
Non-stationary photovoltage excitation in silicon carbide and gallium oxide crystals is studied. The signal transient responses are measured, and the photoelectric parameters necessary for developing adaptive photodetectors, i.e., the specific photoconductivity, Maxwell relaxation time, and diffusion length of carrier transport, are determined. The sensitivity of the photodetector based on gallium oxide is determined.
作者简介
M. Bryushinin
Ioffe Institute
编辑信件的主要联系方式.
Email: mb@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Sokolov
Ioffe Institute
Email: mb@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Zavestovskaya
Lebedev Physical Institute; National Research Nuclear University “MEPhI”
Email: mb@mail.ioffe.ru
俄罗斯联邦, 53 Leninskii Pr., Moscow, 119991; 31 Kashirskoe Sh., Moscow, 115409
R. Romashko
Institute of Automation and Control Processes
Email: mb@mail.ioffe.ru
俄罗斯联邦, 5 Radio St., Vladivostok, 690041
Yu. Kul’chin
National Research Nuclear University “MEPhI”; Institute of Automation and Control Processes
Email: mb@mail.ioffe.ru
俄罗斯联邦, 31 Kashirskoe Sh., Moscow, 115409; 5 Radio St., Vladivostok, 690041
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