Мақаланы E-mail арқылы жіберу Growth of Si/Si1-xGex/Si (x < 0.1) Quantum Wells by Modulating the Ge Molecular Flow. II. Study of Properties
- Авторлар: Klekovkin A.V.1,2, Kazakov I.P.1, Tsvetkov V.A.1, Akmaev M.A.1, Zinov’ev S.A.1
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Мекемелер:
- Lebedev Physical Institute
- Institute of Ultrahigh Frequency Semiconductor Electronics
- Шығарылым: Том 46, № 3 (2019)
- Беттер: 89-92
- Бөлім: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228907
- DOI: https://doi.org/10.3103/S1068335619030047
- ID: 228907
Дәйексөз келтіру
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Тек жазылушылар үшін
Аннотация
Single quantum wells in the Si1-xGex/Si (x < 0.1) system grown in the mode of molecular Ge flow modulation in forming the solid solution layer are studied. The grown heterostructures are investigated by the low-temperature photoluminescence method, and their properties were compared with the properties of similar heterostructures grown without modulation of the Ge molecular flow. It is shown that modulation of the Ge flow has almost no effect on the spectral properties of the quantum wells.
Авторлар туралы
A. Klekovkin
Lebedev Physical Institute; Institute of Ultrahigh Frequency Semiconductor Electronics
Хат алмасуға жауапты Автор.
Email: aklekovkinbox@gmail.com
Ресей, Leninskii pr. 53, Moscow, 119991; Nagornyi pr. 7, str. 5, Moscow, 117105
I. Kazakov
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Ресей, Leninskii pr. 53, Moscow, 119991
V. Tsvetkov
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Ресей, Leninskii pr. 53, Moscow, 119991
M. Akmaev
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Ресей, Leninskii pr. 53, Moscow, 119991
S. Zinov’ev
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Ресей, Leninskii pr. 53, Moscow, 119991
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