Email this article Growth of Si/Si1-xGex/Si (x < 0.1) Quantum Wells by Modulating the Ge Molecular Flow. II. Study of Properties
- Authors: Klekovkin A.V.1,2, Kazakov I.P.1, Tsvetkov V.A.1, Akmaev M.A.1, Zinov’ev S.A.1
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Affiliations:
- Lebedev Physical Institute
- Institute of Ultrahigh Frequency Semiconductor Electronics
- Issue: Vol 46, No 3 (2019)
- Pages: 89-92
- Section: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228907
- DOI: https://doi.org/10.3103/S1068335619030047
- ID: 228907
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Abstract
Single quantum wells in the Si1-xGex/Si (x < 0.1) system grown in the mode of molecular Ge flow modulation in forming the solid solution layer are studied. The grown heterostructures are investigated by the low-temperature photoluminescence method, and their properties were compared with the properties of similar heterostructures grown without modulation of the Ge molecular flow. It is shown that modulation of the Ge flow has almost no effect on the spectral properties of the quantum wells.
About the authors
A. V. Klekovkin
Lebedev Physical Institute; Institute of Ultrahigh Frequency Semiconductor Electronics
Author for correspondence.
Email: aklekovkinbox@gmail.com
Russian Federation, Leninskii pr. 53, Moscow, 119991; Nagornyi pr. 7, str. 5, Moscow, 117105
I. P. Kazakov
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Russian Federation, Leninskii pr. 53, Moscow, 119991
V. A. Tsvetkov
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Russian Federation, Leninskii pr. 53, Moscow, 119991
M. A. Akmaev
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Russian Federation, Leninskii pr. 53, Moscow, 119991
S. A. Zinov’ev
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Russian Federation, Leninskii pr. 53, Moscow, 119991
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