电邮这篇文章 Growth of Si/Si1-xGex/Si (x < 0.1) Quantum Wells by Modulating the Ge Molecular Flow. II. Study of Properties
- 作者: Klekovkin A.V.1,2, Kazakov I.P.1, Tsvetkov V.A.1, Akmaev M.A.1, Zinov’ev S.A.1
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隶属关系:
- Lebedev Physical Institute
- Institute of Ultrahigh Frequency Semiconductor Electronics
- 期: 卷 46, 编号 3 (2019)
- 页面: 89-92
- 栏目: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228907
- DOI: https://doi.org/10.3103/S1068335619030047
- ID: 228907
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详细
Single quantum wells in the Si1-xGex/Si (x < 0.1) system grown in the mode of molecular Ge flow modulation in forming the solid solution layer are studied. The grown heterostructures are investigated by the low-temperature photoluminescence method, and their properties were compared with the properties of similar heterostructures grown without modulation of the Ge molecular flow. It is shown that modulation of the Ge flow has almost no effect on the spectral properties of the quantum wells.
作者简介
A. Klekovkin
Lebedev Physical Institute; Institute of Ultrahigh Frequency Semiconductor Electronics
编辑信件的主要联系方式.
Email: aklekovkinbox@gmail.com
俄罗斯联邦, Leninskii pr. 53, Moscow, 119991; Nagornyi pr. 7, str. 5, Moscow, 117105
I. Kazakov
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
俄罗斯联邦, Leninskii pr. 53, Moscow, 119991
V. Tsvetkov
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
俄罗斯联邦, Leninskii pr. 53, Moscow, 119991
M. Akmaev
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
俄罗斯联邦, Leninskii pr. 53, Moscow, 119991
S. Zinov’ev
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
俄罗斯联邦, Leninskii pr. 53, Moscow, 119991
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