Growth of Si/Si 1-x Ge x /Si (x &lt; 0.1) Quantum Wells by Modulating the Ge Molecular Flow. II. Study of Properties

A. V. Klekovkin; I. P. Kazakov; V. A. Tsvetkov; M. A. Akmaev; S. A. Zinov’ev

doi:10.3103/S1068335619030047

Growth of Si/Si_1-xGe_x/Si (x < 0.1) Quantum Wells by Modulating the Ge Molecular Flow. II. Study of Properties

Autores: Klekovkin A.V.¹^,2, Kazakov I.P.¹, Tsvetkov V.A.¹, Akmaev M.A.¹, Zinov’ev S.A.¹
Afiliações:
1. Lebedev Physical Institute
2. Institute of Ultrahigh Frequency Semiconductor Electronics
Edição: Volume 46, Nº 3 (2019)
Páginas: 89-92
Seção: Article
URL: https://journals.rcsi.science/1068-3356/article/view/228907
DOI: https://doi.org/10.3103/S1068335619030047
ID: 228907

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Resumo

Single quantum wells in the Si_1-xGe_x/Si (x < 0.1) system grown in the mode of molecular Ge flow modulation in forming the solid solution layer are studied. The grown heterostructures are investigated by the low-temperature photoluminescence method, and their properties were compared with the properties of similar heterostructures grown without modulation of the Ge molecular flow. It is shown that modulation of the Ge flow has almost no effect on the spectral properties of the quantum wells.

Palavras-chave

Si_1-xGe_x/Si heterostructures, molecular-beam epitaxy, quantum wells, low-temperature photoluminescence

Sobre autores

A. Klekovkin

Lebedev Physical Institute; Institute of Ultrahigh Frequency Semiconductor Electronics

Autor responsável pela correspondência
Email: aklekovkinbox@gmail.com
Rússia, Leninskii pr. 53, Moscow, 119991; Nagornyi pr. 7, str. 5, Moscow, 117105