Enviar artigo por via de e-mail Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy
- Autores: Kazakov I.P.1, Klekovkin A.V.1,2, Tsvetkov V.A.1, Akmaev M.A.1, Uvarov O.V.3
-
Afiliações:
- Lebedev Physical Institute
- Institute of Ultrahigh Frequency Semiconductor Electronics
- Prokhorov General Physics Institute
- Edição: Volume 46, Nº 1 (2019)
- Páginas: 5-8
- Seção: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228835
- DOI: https://doi.org/10.3103/S1068335619010020
- ID: 228835
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
Single quantum wells in the system Si1_xGex/Si with x < 0.1 are grown by molecular-beam epitaxy in the mode of periodic Ge molecular flow interruption during the formation of the alloy layer. It allowed an increase in the operating current of the source electron gun, which provided a more stable molecular Ge flow. The grown heterostructures are studied by transmission scanning electron microscopy methods
Sobre autores
I. Kazakov
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Rússia, Leninskii pr. 53, Moscow, 119991
A. Klekovkin
Lebedev Physical Institute; Institute of Ultrahigh Frequency Semiconductor Electronics
Autor responsável pela correspondência
Email: aklekovkinbox@gmail.com
Rússia, Leninskii pr. 53, Moscow, 119991; Nagornyi pr. 7, str. 5, Moscow, 117105
V. Tsvetkov
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Rússia, Leninskii pr. 53, Moscow, 119991
M. Akmaev
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Rússia, Leninskii pr. 53, Moscow, 119991
O. Uvarov
Prokhorov General Physics Institute
Email: aklekovkinbox@gmail.com
Rússia, ul. Vavilova38, Moscow, 119991
Arquivos suplementares
