Email this article Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy
- Authors: Kazakov I.P.1, Klekovkin A.V.1,2, Tsvetkov V.A.1, Akmaev M.A.1, Uvarov O.V.3
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Affiliations:
- Lebedev Physical Institute
- Institute of Ultrahigh Frequency Semiconductor Electronics
- Prokhorov General Physics Institute
- Issue: Vol 46, No 1 (2019)
- Pages: 5-8
- Section: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228835
- DOI: https://doi.org/10.3103/S1068335619010020
- ID: 228835
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Abstract
Single quantum wells in the system Si1_xGex/Si with x < 0.1 are grown by molecular-beam epitaxy in the mode of periodic Ge molecular flow interruption during the formation of the alloy layer. It allowed an increase in the operating current of the source electron gun, which provided a more stable molecular Ge flow. The grown heterostructures are studied by transmission scanning electron microscopy methods
About the authors
I. P. Kazakov
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Russian Federation, Leninskii pr. 53, Moscow, 119991
A. V. Klekovkin
Lebedev Physical Institute; Institute of Ultrahigh Frequency Semiconductor Electronics
Author for correspondence.
Email: aklekovkinbox@gmail.com
Russian Federation, Leninskii pr. 53, Moscow, 119991; Nagornyi pr. 7, str. 5, Moscow, 117105
V. A. Tsvetkov
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Russian Federation, Leninskii pr. 53, Moscow, 119991
M. A. Akmaev
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Russian Federation, Leninskii pr. 53, Moscow, 119991
O. V. Uvarov
Prokhorov General Physics Institute
Email: aklekovkinbox@gmail.com
Russian Federation, ul. Vavilova38, Moscow, 119991
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