Мақаланы E-mail арқылы жіберу Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy
- Авторлар: Kazakov I.P.1, Klekovkin A.V.1,2, Tsvetkov V.A.1, Akmaev M.A.1, Uvarov O.V.3
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Мекемелер:
- Lebedev Physical Institute
- Institute of Ultrahigh Frequency Semiconductor Electronics
- Prokhorov General Physics Institute
- Шығарылым: Том 46, № 1 (2019)
- Беттер: 5-8
- Бөлім: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228835
- DOI: https://doi.org/10.3103/S1068335619010020
- ID: 228835
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Аннотация
Single quantum wells in the system Si1_xGex/Si with x < 0.1 are grown by molecular-beam epitaxy in the mode of periodic Ge molecular flow interruption during the formation of the alloy layer. It allowed an increase in the operating current of the source electron gun, which provided a more stable molecular Ge flow. The grown heterostructures are studied by transmission scanning electron microscopy methods
Авторлар туралы
I. Kazakov
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Ресей, Leninskii pr. 53, Moscow, 119991
A. Klekovkin
Lebedev Physical Institute; Institute of Ultrahigh Frequency Semiconductor Electronics
Хат алмасуға жауапты Автор.
Email: aklekovkinbox@gmail.com
Ресей, Leninskii pr. 53, Moscow, 119991; Nagornyi pr. 7, str. 5, Moscow, 117105
V. Tsvetkov
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Ресей, Leninskii pr. 53, Moscow, 119991
M. Akmaev
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Ресей, Leninskii pr. 53, Moscow, 119991
O. Uvarov
Prokhorov General Physics Institute
Email: aklekovkinbox@gmail.com
Ресей, ul. Vavilova38, Moscow, 119991
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