电邮这篇文章 Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy
- 作者: Kazakov I.P.1, Klekovkin A.V.1,2, Tsvetkov V.A.1, Akmaev M.A.1, Uvarov O.V.3
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隶属关系:
- Lebedev Physical Institute
- Institute of Ultrahigh Frequency Semiconductor Electronics
- Prokhorov General Physics Institute
- 期: 卷 46, 编号 1 (2019)
- 页面: 5-8
- 栏目: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228835
- DOI: https://doi.org/10.3103/S1068335619010020
- ID: 228835
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详细
Single quantum wells in the system Si1_xGex/Si with x < 0.1 are grown by molecular-beam epitaxy in the mode of periodic Ge molecular flow interruption during the formation of the alloy layer. It allowed an increase in the operating current of the source electron gun, which provided a more stable molecular Ge flow. The grown heterostructures are studied by transmission scanning electron microscopy methods
作者简介
I. Kazakov
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
俄罗斯联邦, Leninskii pr. 53, Moscow, 119991
A. Klekovkin
Lebedev Physical Institute; Institute of Ultrahigh Frequency Semiconductor Electronics
编辑信件的主要联系方式.
Email: aklekovkinbox@gmail.com
俄罗斯联邦, Leninskii pr. 53, Moscow, 119991; Nagornyi pr. 7, str. 5, Moscow, 117105
V. Tsvetkov
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
俄罗斯联邦, Leninskii pr. 53, Moscow, 119991
M. Akmaev
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
俄罗斯联邦, Leninskii pr. 53, Moscow, 119991
O. Uvarov
Prokhorov General Physics Institute
Email: aklekovkinbox@gmail.com
俄罗斯联邦, ul. Vavilova38, Moscow, 119991
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