Generation of Boron Ions for Beam and Plasma Technologies
- 作者: Bugaev A.S.1, Vizir A.V.1, Gushenets V.I.1, Nikolaev A.G.1, Oks E.M.1,2, Savkin K.P.1, Yushkov Y.G.2, Tyunkov A.V.2, Frolova V.P.1,2, Shandrikov M.V.1, Yushkov G.Y.1
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隶属关系:
- Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences
- Tomsk State University of Control Systems and Radioelectronics
- 期: 卷 62, 编号 7 (2019)
- 页面: 1117-1122
- 栏目: Article
- URL: https://journals.rcsi.science/1064-8887/article/view/242025
- DOI: https://doi.org/10.1007/s11182-019-01825-6
- ID: 242025
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详细
The urgency of the study of generation of beams and plasmas containing boron ions is caused by their application in ion-beam and plasma technologies of modification of the surface properties of not only semiconductors, but also structural materials. This is due to the fact that boron compounds are hard and chemically resistant materials that can be used to create hardening and protective surface coatings for a wide nomenclature of details. The operating principle and the characteristics of the experimental setup developed for generation of plasma and boron ion beams intended for creation of such coatings are presented, including an ion source based on vacuum arc with separation of boron isotopes in a magnetic field intended for highdose ion implantation, a plasma generator with boron target intended for obtaining coatings by magnetron sputtering, and a forevacuum electron source intended for synthesis of surface boron-containing coatings by electron beam evaporation.
作者简介
A. Bugaev
Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences
编辑信件的主要联系方式.
Email: bugaev@opee.hcei.tsc.ru
俄罗斯联邦, Tomsk
A. Vizir
Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: bugaev@opee.hcei.tsc.ru
俄罗斯联邦, Tomsk
V. Gushenets
Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: bugaev@opee.hcei.tsc.ru
俄罗斯联邦, Tomsk
A. Nikolaev
Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: bugaev@opee.hcei.tsc.ru
俄罗斯联邦, Tomsk
E. Oks
Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences; Tomsk State University of Control Systems and Radioelectronics
Email: bugaev@opee.hcei.tsc.ru
俄罗斯联邦, Tomsk; Tomsk
K. Savkin
Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: bugaev@opee.hcei.tsc.ru
俄罗斯联邦, Tomsk
Yu. Yushkov
Tomsk State University of Control Systems and Radioelectronics
Email: bugaev@opee.hcei.tsc.ru
俄罗斯联邦, Tomsk
A. Tyunkov
Tomsk State University of Control Systems and Radioelectronics
Email: bugaev@opee.hcei.tsc.ru
俄罗斯联邦, Tomsk
V. Frolova
Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences; Tomsk State University of Control Systems and Radioelectronics
Email: bugaev@opee.hcei.tsc.ru
俄罗斯联邦, Tomsk; Tomsk
M. Shandrikov
Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: bugaev@opee.hcei.tsc.ru
俄罗斯联邦, Tomsk
G. Yushkov
Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: bugaev@opee.hcei.tsc.ru
俄罗斯联邦, Tomsk
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