Generation of Boron Ions for Beam and Plasma Technologies

Аннотация

The urgency of the study of generation of beams and plasmas containing boron ions is caused by their application in ion-beam and plasma technologies of modification of the surface properties of not only semiconductors, but also structural materials. This is due to the fact that boron compounds are hard and chemically resistant materials that can be used to create hardening and protective surface coatings for a wide nomenclature of details. The operating principle and the characteristics of the experimental setup developed for generation of plasma and boron ion beams intended for creation of such coatings are presented, including an ion source based on vacuum arc with separation of boron isotopes in a magnetic field intended for highdose ion implantation, a plasma generator with boron target intended for obtaining coatings by magnetron sputtering, and a forevacuum electron source intended for synthesis of surface boron-containing coatings by electron beam evaporation.