Generation of Boron Ions for Beam and Plasma Technologies


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The urgency of the study of generation of beams and plasmas containing boron ions is caused by their application in ion-beam and plasma technologies of modification of the surface properties of not only semiconductors, but also structural materials. This is due to the fact that boron compounds are hard and chemically resistant materials that can be used to create hardening and protective surface coatings for a wide nomenclature of details. The operating principle and the characteristics of the experimental setup developed for generation of plasma and boron ion beams intended for creation of such coatings are presented, including an ion source based on vacuum arc with separation of boron isotopes in a magnetic field intended for highdose ion implantation, a plasma generator with boron target intended for obtaining coatings by magnetron sputtering, and a forevacuum electron source intended for synthesis of surface boron-containing coatings by electron beam evaporation.

Sobre autores

A. Bugaev

Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences

Autor responsável pela correspondência
Email: bugaev@opee.hcei.tsc.ru
Rússia, Tomsk

A. Vizir

Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences

Email: bugaev@opee.hcei.tsc.ru
Rússia, Tomsk

V. Gushenets

Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences

Email: bugaev@opee.hcei.tsc.ru
Rússia, Tomsk

A. Nikolaev

Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences

Email: bugaev@opee.hcei.tsc.ru
Rússia, Tomsk

E. Oks

Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences; Tomsk State University of Control Systems and Radioelectronics

Email: bugaev@opee.hcei.tsc.ru
Rússia, Tomsk; Tomsk

K. Savkin

Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences

Email: bugaev@opee.hcei.tsc.ru
Rússia, Tomsk

Yu. Yushkov

Tomsk State University of Control Systems and Radioelectronics

Email: bugaev@opee.hcei.tsc.ru
Rússia, Tomsk

A. Tyunkov

Tomsk State University of Control Systems and Radioelectronics

Email: bugaev@opee.hcei.tsc.ru
Rússia, Tomsk

V. Frolova

Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences; Tomsk State University of Control Systems and Radioelectronics

Email: bugaev@opee.hcei.tsc.ru
Rússia, Tomsk; Tomsk

M. Shandrikov

Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences

Email: bugaev@opee.hcei.tsc.ru
Rússia, Tomsk

G. Yushkov

Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences

Email: bugaev@opee.hcei.tsc.ru
Rússia, Tomsk

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