A 1280 × 1024 CMOS visible-range photodetector chip with a pixel size of 13 × 13 μm


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详细

A photodetector array chip for detection of the optical signal in a wave range of 0.4–1.0 μm; conversion of the optical signal into the electric signal; and its extraction in the analog form to 1, 2, 4, 8, or 16 outputs has been designed, fabricated, and studied. The main parameters of this chip are the following: the charge capacity is up to 200000 electrons, the frame rate is higher than 600 Hz at the maximum resolution, and the integrated sensitivity is up to 1000 V/(lx s).

作者简介

D. Borodin

RTC Inpex, ltd; JSC NPP Pul’sar

编辑信件的主要联系方式.
Email: dvb1@inbox.ru
俄罗斯联邦, Mytishchi, Moscow oblast, 141013; Moscow, 105187

Yu. Osipov

RTC Inpex, ltd; JSC NPP Pul’sar

Email: dvb1@inbox.ru
俄罗斯联邦, Mytishchi, Moscow oblast, 141013; Moscow, 105187

V. Vasil’ev

RTC Inpex, ltd

Email: dvb1@inbox.ru
俄罗斯联邦, Mytishchi, Moscow oblast, 141013


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