Email this article A 1280 × 1024 CMOS visible-range photodetector chip with a pixel size of 13 × 13 μm
- Authors: Borodin D.V.1,2, Osipov Y.V.1,2, Vasil’ev V.V.1
-
Affiliations:
- RTC Inpex, ltd
- JSC NPP Pul’sar
- Issue: Vol 62, No 3 (2017)
- Pages: 299-303
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/198110
- DOI: https://doi.org/10.1134/S1064226917030032
- ID: 198110
Cite item
Open Access
Access granted
Subscription Access
Abstract
A photodetector array chip for detection of the optical signal in a wave range of 0.4–1.0 μm; conversion of the optical signal into the electric signal; and its extraction in the analog form to 1, 2, 4, 8, or 16 outputs has been designed, fabricated, and studied. The main parameters of this chip are the following: the charge capacity is up to 200000 electrons, the frame rate is higher than 600 Hz at the maximum resolution, and the integrated sensitivity is up to 1000 V/(lx s).
Keywords
About the authors
D. V. Borodin
RTC Inpex, ltd; JSC NPP Pul’sar
Author for correspondence.
Email: dvb1@inbox.ru
Russian Federation, Mytishchi, Moscow oblast, 141013; Moscow, 105187
Yu. V. Osipov
RTC Inpex, ltd; JSC NPP Pul’sar
Email: dvb1@inbox.ru
Russian Federation, Mytishchi, Moscow oblast, 141013; Moscow, 105187
V. V. Vasil’ev
RTC Inpex, ltd
Email: dvb1@inbox.ru
Russian Federation, Mytishchi, Moscow oblast, 141013
