Focal Plane Array Based on the InGaAs/InP Heterostructure for 3D Imaging in Short-Wave IR Range

Аннотация

A Russian-made focal plane array (FPA) for gated imager working in the short-wave IR range is presented. The FPA contains an array of p–i–n photodiodes based on a 320 × 256 InGaAs/InP heterostructure with a pitch of 30 µm, readout integrated circuit, thermoelectric cooler, and a sealed housing with a sapphire window. A distinctive feature of the FPA is related to functioning in four modes: passive, gated 3D, gated 2D, and asynchronous binary. Flexible combinations of such modes can be used to obtain maximum data on an object under observation. Range data that are formed in each pixel of the FPA and the signal intensities make it possible to synthesize 3D images of objects. The main parameters of the FPA and IR images obtained in different modes are demonstrated. Calculated ranging results are presented versus power and divergence of laser radiation. The main sources of errors in calculations of range resolution are considered.