To the Problem of Optimization of Parameters of a Double Heterostructure Based on Direct-Gap Semiconductors for Avalanche Photodiodes

Аннотация

A double heterostructure based on direct-gap semiconductors with a photoabsorption middle layer at the avalanche breakdown voltage is considered. Such structures are used in the development of avalanche photodiodes with separate absorption and multiplication regions (APD with SAMR). It is shown that impact generation of electron–hole pairs should be considered in calculating the maximum possible characteristics of APDs with SAMR even in the absorption layer; therewith, this can be performed analytically.