Enviar artigo por via de e-mail To the Problem of Optimization of Parameters of a Double Heterostructure Based on Direct-Gap Semiconductors for Avalanche Photodiodes
- Autores: Kholodnov V.A.1,2,3, Burlakov I.D.1,4
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Afiliações:
- Orion Research and Production Association
- Kotel’nikov Institute of Radio Engineering and Electronics
- Moscow Institute of Physics and Technology
- Moscow Technological University (MIREA)
- Edição: Volume 63, Nº 9 (2018)
- Páginas: 1127-1131
- Seção: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/200217
- DOI: https://doi.org/10.1134/S1064226918090103
- ID: 200217
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Resumo
A double heterostructure based on direct-gap semiconductors with a photoabsorption middle layer at the avalanche breakdown voltage is considered. Such structures are used in the development of avalanche photodiodes with separate absorption and multiplication regions (APD with SAMR). It is shown that impact generation of electron–hole pairs should be considered in calculating the maximum possible characteristics of APDs with SAMR even in the absorption layer; therewith, this can be performed analytically.
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Sobre autores
V. Kholodnov
Orion Research and Production Association; Kotel’nikov Institute of Radio Engineering and Electronics; Moscow Institute of Physics and Technology
Autor responsável pela correspondência
Email: vkholodnov@mail.ru
Rússia, Moscow, 111538; Moscow, 125009; Dolgoprudnyi, Moscow oblast, 141700
I. Burlakov
Orion Research and Production Association; Moscow Technological University (MIREA)
Email: vkholodnov@mail.ru
Rússia, Moscow, 111538; Moscow, 119454
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