Effect of proton irradiation on the breakdown voltage of a high-voltage p–n junction
- Autores: Paderov V.1, Silkin D.1, Goryachkin Y.1, Khapugin A.2, Grishanin A.2
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Afiliações:
- Ogarev Mordovia State University
- OAO Electrovypryamitel’
- Edição: Volume 62, Nº 6 (2017)
- Páginas: 616-620
- Seção: Physical Processes in Electron Devices
- URL: https://journals.rcsi.science/1064-2269/article/view/198449
- DOI: https://doi.org/10.1134/S1064226917060158
- ID: 198449
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Resumo
The effect of hydrogen-related shallow thermal donors and acceptor-like defects arising under proton irradiation of silicon on the breakdown voltage of a high-voltage p–n junction is considered. The relations making it possible to compute the breakdown voltage of the irradiated p–n junction taking into account the increase in critical field intensity during the ingress of hydrogen-related shallow thermal donors into the region of collisional ionization of the p–n junction are obtained. A technique for determination of the layer position and the minimum dose of hydrogen-related shallow thermal donors making it possible to decrease the breakdown voltage by a specified amount is proposed.
Sobre autores
V. Paderov
Ogarev Mordovia State University
Email: d-s.silkin@mail.ru
Rússia, Saransk, Mordovia, 430005
D. Silkin
Ogarev Mordovia State University
Autor responsável pela correspondência
Email: d-s.silkin@mail.ru
Rússia, Saransk, Mordovia, 430005
Yu. Goryachkin
Ogarev Mordovia State University
Email: d-s.silkin@mail.ru
Rússia, Saransk, Mordovia, 430005
A. Khapugin
OAO Electrovypryamitel’
Email: d-s.silkin@mail.ru
Rússia, Saransk, Mordovia, 430030
A. Grishanin
OAO Electrovypryamitel’
Email: d-s.silkin@mail.ru
Rússia, Saransk, Mordovia, 430030